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  Datasheet File OCR Text:
 Formosa MS
B AV 9 9
Description
The BAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits.
Package Dimensions
TPU.34)QBDLHF*
Style : Pin1.Anode 2.Cathode 3.Common Connection Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 E 0 0.10 L 0.85 1.15 0C 10 C F 0.45 0.55 M
Absolute Maximum Ratings at Ta = 25 :
Parameter Junction Temperature Storage Temperature Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current(1ms) Total Power Dissipation Symbol Tj Tstg Ratings +150 -65~+150 70 70 150 500 1000 250 Unit
PD
V V mA mA mA mW
Characteristics
Characteristic
at Ta = 25 :
Symbol Min. Max. Unit Test Conditions
Reverse Breakdown Voltage
V(BR)
70
-
V
IR=100uA
VF(1)
-
715
mV
IF=1mA
Forward Voltage
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1000
mV
IF=50mA
VF(4)
-
1250
mV
IF=150mA
Reverse Current
IR
-
2.5
uA
VR=70V
Total Capacitance
CT
1.5
pF
VR=0, f=1MHz
Reverse Recovery Time
Trr
-
6
nS
IF=IR=10mA, RL=100 L measured at IR=1mA
Formosa MS
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of FMS. FMS reserves the right to make changes to its products without notice. FMS semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. FMS assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: 5F , No. 208 , Sec 3 , Chung Yang Rd. TuCheng , Taipei Hsien , Taiwan, R. O. C. TEL : 886-2-2269-6661 FAX : 886-2-2269-6141 China: No. Y Bldg , Zhijiang Hi-tech Park Binjiang Zone , Hangzhou , China TEL : 86-571-8669-8326 FAX : 86-571-8669-6991


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